FDP86363-F085
onsemi
onsemi
MOSFET N-CH 80V 110A TO220-3
$2.54
Available to order
Reference Price (USD)
1+
$2.54498
500+
$2.5195302
1000+
$2.4940804
1500+
$2.4686306
2000+
$2.4431808
2500+
$2.417731
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose FDP86363-F085 by onsemi. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with FDP86363-F085 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 2.8mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
Related Products
onsemi
NVMFS5C442NLAFT1G
Alpha & Omega Semiconductor Inc.
AOTF4N60L
Rohm Semiconductor
R6515KNX3C16
STMicroelectronics
STP120N4F6
Diodes Incorporated
DMP2004K-7
Diodes Incorporated
DMP3026SFDF-13
onsemi
NTMFS6H848NLT1G
Rohm Semiconductor
RQ6A045ZPTR
Infineon Technologies
IPI086N10N3GXKSA1
Vishay Siliconix