FDU8870
Fairchild Semiconductor
Fairchild Semiconductor
MOSFET N-CH 30V 21A/160A IPAK
$0.90
Available to order
Reference Price (USD)
1+
$0.90000
500+
$0.891
1000+
$0.882
1500+
$0.873
2000+
$0.864
2500+
$0.855
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Fairchild Semiconductor presents FDU8870, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, FDU8870 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 160A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 3.9mOhm @ 35A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 5160 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 160W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I-PAK
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Related Products
IXYS
IXFA10N80P
onsemi
2SK1461
Infineon Technologies
IPP80P03P4L04AKSA2
STMicroelectronics
SCTWA50N120
Fairchild Semiconductor
FQB16N15TM
Diodes Incorporated
DMN80H2D0SCTI
onsemi
FDMC007N08LC
Nexperia USA Inc.
BUK78150-55A/CUX
Renesas Electronics America Inc
2SK1838S-E
Infineon Technologies