FESB8BTHE3_A/I
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 8A TO263AB
$0.81
Available to order
Reference Price (USD)
1+
$0.80850
500+
$0.800415
1000+
$0.79233
1500+
$0.784245
2000+
$0.77616
2500+
$0.768075
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Revolutionize your power electronics with Vishay General Semiconductor - Diodes Division's FESB8BTHE3_A/I Single Rectifier Diodes, offering exceptional performance and reliability. These diodes are ideal for high-frequency and high-voltage applications, including telecommunications and medical devices. With advanced features like low forward drop and high temperature operation, they set the benchmark for quality. Vishay General Semiconductor - Diodes Division provides solutions you can trust. Get started by sending us your requirements!
Specifications
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 100 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB (D²PAK)
- Operating Temperature - Junction: -55°C ~ 150°C
Related Products
Central Semiconductor Corp
1N4937 BK PBFREE
Vishay General Semiconductor - Diodes Division
VS-2EQH01-M3/H
Vishay General Semiconductor - Diodes Division
V1PM15-M3/H
SMC Diode Solutions
182NQ030-1
KYOCERA AVX
SD1206S100S1R0
Micro Commercial Co
SMLJ60S6-TP
Sanken
AU01ZV1
Diodes Incorporated
SBR3U60P5Q-13
Panjit International Inc.
PG4005_R2_00001
GeneSiC Semiconductor