FESB8BTHE3_A/P
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 8A TO263AB
$0.81
Available to order
Reference Price (USD)
1+
$0.80850
500+
$0.800415
1000+
$0.79233
1500+
$0.784245
2000+
$0.77616
2500+
$0.768075
Exquisite packaging
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Maximize efficiency with Vishay General Semiconductor - Diodes Division's FESB8BTHE3_A/P Single Rectifier Diodes, the go-to choice for professionals seeking reliable power rectification. Suitable for high-frequency applications, these diodes provide fast recovery times and low conduction losses. Commonly used in switch-mode power supplies, welding equipment, and battery chargers, they are built to withstand harsh environments. Features include high surge current ratings and robust packaging. Don't miss out request a sample or quote today!
Specifications
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 100 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB (D²PAK)
- Operating Temperature - Junction: -55°C ~ 150°C
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