FF1200R17KE3NOSA1
Infineon Technologies
Infineon Technologies
IGBT MODULE VCES 1700V 1200A
$1,699.20
Available to order
Reference Price (USD)
2+
$1,064.66000
Exquisite packaging
Discount
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The FF1200R17KE3NOSA1 from Infineon Technologies sets the standard in IGBT Modules with its compact design and high power density. Ideal for servo drives and plasma cutting, it combines fast switching with low conduction losses. Partner with Infineon Technologies for top-tier semiconductor solutions. Get in touch for details!
Specifications
- Product Status: Not For New Designs
- IGBT Type: -
- Configuration: Single Chopper
- Voltage - Collector Emitter Breakdown (Max): 1700 V
- Current - Collector (Ic) (Max): -
- Power - Max: 595000 W
- Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 1200A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 110 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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