FF200R12KT3EHOSA1
Infineon Technologies
Infineon Technologies
IGBT MODULE 1200V 1050W
$111.38
Available to order
Reference Price (USD)
10+
$105.76200
Exquisite packaging
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Achieve precision power control with Infineon Technologies's FF200R12KT3EHOSA1 IGBT Module. Its rugged construction and high isolation voltage make it a top choice for marine propulsion and grid infrastructure. Features include solder-free assembly and RoHS compliance. Elevate your systems request a consultation today.
Specifications
- Product Status: Not For New Designs
- IGBT Type: -
- Configuration: 2 Independent
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): -
- Power - Max: 1050 W
- Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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