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FF200R12KT3HOSA1

Infineon Technologies
FF200R12KT3HOSA1 Preview
Infineon Technologies
IGBT MODULE 1200V 1050W
$167.08
Available to order
Reference Price (USD)
10+
$105.76200
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Not For New Designs
  • IGBT Type: Trench Field Stop
  • Configuration: 2 Independent
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): -
  • Power - Max: 1050 W
  • Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A
  • Current - Collector Cutoff (Max): 5 mA
  • Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module

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