FF800R17KE3NOSA1
Infineon Technologies
Infineon Technologies
IGBT MODULE 1700V 4450W
$850.35
Available to order
Reference Price (USD)
2+
$839.20000
Exquisite packaging
Discount
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Infineon Technologies's FF800R17KE3NOSA1 IGBT Module offers exceptional reliability for critical applications like aerospace and defense. With features such as avalanche ruggedness and low VCE(sat), it ensures optimal performance. Trust Infineon Technologies for advanced Discrete Semiconductor Products. Ask about customization options!
Specifications
- Product Status: Not For New Designs
- IGBT Type: -
- Configuration: 2 Independent
- Voltage - Collector Emitter Breakdown (Max): 1700 V
- Current - Collector (Ic) (Max): -
- Power - Max: 4450 W
- Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 800A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 72 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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