FF8MR12W2M1B11BOMA1
Infineon Technologies
Infineon Technologies
MOSFET 2N-CH 1200V AG-EASY2BM-2
$326.66
Available to order
Reference Price (USD)
1+
$233.75000
15+
$223.86933
Exquisite packaging
Discount
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Discover high-performance FF8MR12W2M1B11BOMA1 from Infineon Technologies, a leading solution in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are designed for efficiency and reliability, making them ideal for various electronic applications. Features include low power consumption, high switching speed, and excellent thermal stability. Perfect for power management, amplification, and switching circuits. Contact us today for a quote and let Infineon Technologies s FF8MR12W2M1B11BOMA1 enhance your projects with superior quality and performance.
Specifications
- Product Status: Last Time Buy
- FET Type: 2 N-Channel (Dual)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 150A (Tj)
- Rds On (Max) @ Id, Vgs: 7.5mOhm @ 150A, 15V (Typ)
- Vgs(th) (Max) @ Id: 5.55V @ 60mA
- Gate Charge (Qg) (Max) @ Vgs: 372nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds: 11000pF @ 800V
- Power - Max: 20mW (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-EASY2BM-2
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