FGH40N65UFDTU
onsemi
onsemi
IGBT FIELD STOP 650V 80A TO247-3
$4.95
Available to order
Reference Price (USD)
1+
$4.41000
10+
$3.97000
450+
$3.11704
900+
$2.81109
1,350+
$2.39241
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The FGH40N65UFDTU Single IGBT from onsemi delivers unmatched performance in power conversion and control. Ideal for UPS systems, induction heating, and industrial automation, this transistor combines high efficiency with rugged reliability. Features such as short-circuit protection and low EMI make it a standout choice. onsemi's commitment to innovation ensures FGH40N65UFDTU meets the demands of modern electronics. Get in touch for bulk orders and customization options!
Specifications
- Product Status: Obsolete
- IGBT Type: Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
- Power - Max: 290 W
- Switching Energy: 1.19mJ (on), 460µJ (off)
- Input Type: Standard
- Gate Charge: 120 nC
- Td (on/off) @ 25°C: 24ns/112ns
- Test Condition: 400V, 40A, 10Ohm, 15V
- Reverse Recovery Time (trr): 45 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
Related Products
Rohm Semiconductor
RGWSX2TS65DGC13
Infineon Technologies
IRG4PC40SPBF
Harris Corporation
IGTH20N40D
IXYS
IXBH6N170
Renesas Electronics America Inc
RJH60D3DPE-00#J3
IXYS
IXBX50N360HV
IXYS
IXBX25N250
Fairchild Semiconductor
HGTD3N60C3S9A
STMicroelectronics
STGW30NC60WD
Renesas Electronics America Inc