FGH60T65SQD-F155
onsemi
onsemi
IGBT TRENCH/FS 650V 120A TO247-3
$7.10
Available to order
Reference Price (USD)
1+
$4.57000
10+
$4.12100
450+
$3.23576
900+
$2.91813
1,350+
$2.48352
Exquisite packaging
Discount
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Upgrade your power electronics with FGH60T65SQD-F155 Single IGBTs by onsemi, engineered for precision and durability. Perfect for inverters, welding equipment, and automotive applications, these transistors provide fast switching speeds and excellent thermal stability. Key features include high voltage tolerance, low power loss, and compact design. Trust onsemi for top-quality components that meet global standards. Request a quote now to learn more about how FGH60T65SQD-F155 can enhance your projects.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 120 A
- Current - Collector Pulsed (Icm): 240 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 60A
- Power - Max: 333 W
- Switching Energy: 227µJ (on), 100µJ (off)
- Input Type: Standard
- Gate Charge: 79 nC
- Td (on/off) @ 25°C: 20.8ns/102ns
- Test Condition: 400V, 15A, 4.7Ohm, 15V
- Reverse Recovery Time (trr): 34.6 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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