FII30-12E
IXYS
IXYS
IGBT H BRIDGE 1200V 33A I4PAK5
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Achieve higher power density with IXYS's FII30-12E IGBT array solutions. Perfect for aerospace power distribution and traction inverters, these devices provide: low turn-off delay, excellent SOA performance, and simplified thermal management. IXYS supports engineers with comprehensive application notes and design tools. Start your procurement process with a quick inquiry!
Specifications
- Product Status: Obsolete
- IGBT Type: NPT
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 33 A
- Power - Max: 150 W
- Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 20A
- Current - Collector Cutoff (Max): 200 µA
- Input Capacitance (Cies) @ Vce: 1.2 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: i4-Pac™-5
- Supplier Device Package: ISOPLUS i4-PAC™