FJB102TM
onsemi

onsemi
TRANS NPN DARL 100V 8A D2PAK
$1.32
Available to order
Reference Price (USD)
800+
$0.66595
1,600+
$0.53180
2,400+
$0.49826
5,600+
$0.47591
Exquisite packaging
Discount
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Choose FJB102TM by onsemi for exceptional quality in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single are designed for high performance, featuring excellent current handling and stability. Ideal for use in power management and signal amplification, FJB102TM is a versatile solution. Ready to order? Submit your inquiry today and let onsemi provide the components you need.
Specifications
- Product Status: Active
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 8 A
- Voltage - Collector Emitter Breakdown (Max): 100 V
- Vce Saturation (Max) @ Ib, Ic: 2.5V @ 80mA, 8A
- Current - Collector Cutoff (Max): 50µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 4V
- Power - Max: 80 W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D²PAK (TO-263)