FKI10300
Sanken
Sanken
MOSFET N-CH 100V 23A TO220F
$0.28
Available to order
Reference Price (USD)
1,000+
$0.43500
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with FKI10300, a reliable Transistors - FETs, MOSFETs - Single by Sanken. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, FKI10300 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 27.9mOhm @ 17.1A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 650µA
- Gate Charge (Qg) (Max) @ Vgs: 35.8 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 38W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220F
- Package / Case: TO-220-3 Full Pack
Related Products
Infineon Technologies
IPD30N06S215ATMA2
Infineon Technologies
IPZ65R045C7XKSA1
onsemi
NDD02N60ZT4G
Alpha & Omega Semiconductor Inc.
AO4292E
STMicroelectronics
STB18N65M5
Vishay Siliconix
SIR164DP-T1-RE3
IXYS
IXFN36N100
IXYS
IXTY1R6N50D2
Vishay Siliconix
SIHB24N65E-GE3
Rohm Semiconductor