FMMT411FDBW-7
Diodes Incorporated

Diodes Incorporated
SS BIPOLAR TRANSISTORS W-DFN2020
$3.12
Available to order
Reference Price (USD)
1+
$3.12000
500+
$3.0888
1000+
$3.0576
1500+
$3.0264
2000+
$2.9952
2500+
$2.964
Exquisite packaging
Discount
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Trust FMMT411FDBW-7 by Diodes Incorporated for all your transistor needs in the Discrete Semiconductor Products category. These Transistors - Bipolar (BJT) - Single are built to last, with features like high breakdown voltage and excellent thermal performance. Perfect for automotive, industrial, and consumer electronics, FMMT411FDBW-7 ensures reliability. Get in touch today to request a quote and see why Diodes Incorporated is a trusted name in the industry.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 5 A
- Voltage - Collector Emitter Breakdown (Max): 15 V
- Vce Saturation (Max) @ Ib, Ic: 100mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
- Power - Max: 1.7 W
- Frequency - Transition: 110MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-UDFN Exposed Pad
- Supplier Device Package: W-DFN2020-3 (Type A)