FP10R12W1T7B3BOMA1
Infineon Technologies
Infineon Technologies
IGBT MODULE LOW POWER EASY
$36.74
Available to order
Reference Price (USD)
1+
$36.74000
500+
$36.3726
1000+
$36.0052
1500+
$35.6378
2000+
$35.2704
2500+
$34.903
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Infineon Technologies's FP10R12W1T7B3BOMA1 IGBT Module is engineered for high-power applications requiring stability and longevity. Key features include integrated temperature monitoring and low EMI emissions, perfect for medical devices and traction systems. Choose quality contact us for technical specifications and lead times.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 10 A
- Power - Max: 20 mW
- Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 10A (Typ)
- Current - Collector Cutoff (Max): 4.5 µA
- Input Capacitance (Cies) @ Vce: 1.89 nF @ 25 V
- Input: Three Phase Bridge Rectifier
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-EASY1B-2
Related Products
Infineon Technologies
FZ800R12KE3HOSA1
Infineon Technologies
FF150R12RT4HOSA1
Microchip Technology
APTGT150DA60T1G
Infineon Technologies
6MS24017P43W41646NOSA1
Infineon Technologies
FP100R07N3E4B11BOSA1
Microchip Technology
APT60GF120JRD
Infineon Technologies
FP50R12KT4GB15BOSA1
Infineon Technologies
F3L25R12W1T4B27BOMA1
Infineon Technologies
FS200R12KT4RB11BOSA1
IXYS