FP25R12W2T4B11BOMA1
Infineon Technologies
Infineon Technologies
IGBT MOD 1200V 39A 175W
$59.74
Available to order
Reference Price (USD)
1+
$49.49000
10+
$46.17200
Exquisite packaging
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Infineon Technologies's FP25R12W2T4B11BOMA1 IGBT Module offers exceptional reliability for critical applications like aerospace and defense. With features such as avalanche ruggedness and low VCE(sat), it ensures optimal performance. Trust Infineon Technologies for advanced Discrete Semiconductor Products. Ask about customization options!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 39 A
- Power - Max: 175 W
- Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 25A
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 1.45 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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