FP35R12W2T7B11BOMA1
Infineon Technologies
Infineon Technologies
LOW POWER EASY
$61.76
Available to order
Reference Price (USD)
1+
$61.76000
500+
$61.1424
1000+
$60.5248
1500+
$59.9072
2000+
$59.2896
2500+
$58.672
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The FP35R12W2T7B11BOMA1 IGBT Module from Infineon Technologies delivers superior performance for demanding power control tasks. With features such as short-circuit protection and high-frequency operation, it's suited for solar inverters, industrial automation, and more. Trust Infineon Technologies for cutting-edge Discrete Semiconductor Products. Request a sample now!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 35 A
- Power - Max: 20 mW
- Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 35A
- Current - Collector Cutoff (Max): 5.8 µA
- Input Capacitance (Cies) @ Vce: 6.62 nF @ 25 V
- Input: Three Phase Bridge Rectifier
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-EASY2B-2
Related Products
Fairchild Semiconductor
FMG1G300US60L
Fairchild Semiconductor
FMG1G150US60L
Infineon Technologies
F475R07W1H3B11ABOMA1
Fairchild Semiconductor
FP7G100US60
Infineon Technologies
FP150R12KT4PBPSA1
Fairchild Semiconductor
FMG1G75US60H
Infineon Technologies
FF450R07ME4B11BPSA1
Infineon Technologies
FS50R07N2E4
Infineon Technologies
FZ1200R17HE4HOSA2
Infineon Technologies