FP50R07N2E4B11BPSA1
Infineon Technologies
Infineon Technologies
LOW POWER ECONO AG-ECONO2B-411
$113.66
Available to order
Reference Price (USD)
1+
$113.66000
500+
$112.5234
1000+
$111.3868
1500+
$110.2502
2000+
$109.1136
2500+
$107.977
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The FP50R07N2E4B11BPSA1 from Infineon Technologies sets the standard in IGBT Modules with its compact design and high power density. Ideal for servo drives and plasma cutting, it combines fast switching with low conduction losses. Partner with Infineon Technologies for top-tier semiconductor solutions. Get in touch for details!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 70 A
- Power - Max: 20 mW
- Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 50A
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 3.1 nF @ 25 V
- Input: Three Phase Bridge Rectifier
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-ECONO2B
Related Products
Infineon Technologies
FP100R12N2T7BPSA2
Microchip Technology
APTGT30A170T1G
IXYS
MIXG240RF1200PTED
Infineon Technologies
FP75R12KT4B16BOSA1
Infineon Technologies
FF750R17ME7DB11BPSA1
Microchip Technology
APTGT750U60D4G
Infineon Technologies
FS100R12KT4PBPSA1
Infineon Technologies
FDDF80R12W1H3B52BOMA1
Infineon Technologies
F4100R06KL4BOSA1
IXYS