FQA7N90
Fairchild Semiconductor
Fairchild Semiconductor
MOSFET N-CH 900V 7.4A TO3P
$1.49
Available to order
Reference Price (USD)
1+
$1.49000
500+
$1.4751
1000+
$1.4602
1500+
$1.4453
2000+
$1.4304
2500+
$1.4155
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of FQA7N90, a premium Transistors - FETs, MOSFETs - Single from Fairchild Semiconductor. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, FQA7N90 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 900 V
- Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.55Ohm @ 3.7A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 198W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3P
- Package / Case: TO-3P-3, SC-65-3
Related Products
Rohm Semiconductor
RD3G600GNTL
onsemi
NVMJS1D4N06CLTWG
STMicroelectronics
STD20NF06LT4
Microchip Technology
APT12M80B
Fairchild Semiconductor
NDS9400
Infineon Technologies
IPB60R360CFD7ATMA1
Vishay Siliconix
IRFBC40LCPBF
Vishay Siliconix
SUM70090E-GE3
Microchip Technology
APT1201R2BFLLG
Taiwan Semiconductor Corporation