FQB25N33TM-F085
Fairchild Semiconductor
Fairchild Semiconductor
MOSFET N-CH 330V 25A D2PAK
$1.75
Available to order
Reference Price (USD)
800+
$2.28601
1,600+
$2.14149
2,400+
$2.04033
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
FQB25N33TM-F085 by Fairchild Semiconductor is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, FQB25N33TM-F085 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 330 V
- Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 230mOhm @ 12.5A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 15 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 250W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK (TO-263)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
STMicroelectronics
STB11NK50ZT4
Diodes Incorporated
VN10LFTA
Taiwan Semiconductor Corporation
TSM4N60ECP ROG
Texas Instruments
CSD23285F5
Infineon Technologies
IPI80N06S207AKSA2
Taiwan Semiconductor Corporation
TSM60NB190CF C0G
Rohm Semiconductor
RYM002N05T2CL
Vishay Siliconix
SI1330EDL-T1-GE3
STMicroelectronics
STN1NK80Z
onsemi