FQB9N08TM
Fairchild Semiconductor
Fairchild Semiconductor
MOSFET N-CH 80V 9.3A D2PAK
$0.31
Available to order
Reference Price (USD)
1+
$0.31000
500+
$0.3069
1000+
$0.3038
1500+
$0.3007
2000+
$0.2976
2500+
$0.2945
Exquisite packaging
Discount
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Optimize your electronic systems with FQB9N08TM, a high-quality Transistors - FETs, MOSFETs - Single from Fairchild Semiconductor. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, FQB9N08TM provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 9.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 210mOhm @ 4.65A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 3.75W (Ta), 40W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK (TO-263)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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