FQD20N06TM
onsemi
onsemi
MOSFET N-CH 60V 16.8A DPAK
$0.96
Available to order
Reference Price (USD)
2,500+
$0.38755
5,000+
$0.36225
12,500+
$0.34960
25,000+
$0.34270
Exquisite packaging
Discount
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Boost your electronic applications with FQD20N06TM, a reliable Transistors - FETs, MOSFETs - Single by onsemi. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, FQD20N06TM meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Last Time Buy
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 16.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 63mOhm @ 8.4A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 38W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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