FQD6N60CTM-WS
onsemi
onsemi
MOSFET N-CH 600V 4A DPAK
$0.73
Available to order
Reference Price (USD)
2,500+
$0.76740
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
onsemi presents FQD6N60CTM-WS, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, FQD6N60CTM-WS delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 2Ohm @ 2A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 80W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Infineon Technologies
IPW60R280P6FKSA1
IXYS
IXTA52P10P
IXYS
IXFK80N50P
onsemi
NDP6060
Vishay Siliconix
SQS405CENW-T1_GE3
Fairchild Semiconductor
FQP12N60
onsemi
NTD4860NA-1G
IXYS
IXFN80N50Q3
STMicroelectronics
STW20NK50Z
Infineon Technologies