FQD7P06TM
onsemi
onsemi
MOSFET P-CH 60V 5.4A DPAK
$0.86
Available to order
Reference Price (USD)
2,500+
$0.21792
5,000+
$0.20456
12,500+
$0.19121
25,000+
$0.18186
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
onsemi presents FQD7P06TM, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, FQD7P06TM delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Last Time Buy
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 451mOhm @ 2.7A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 295 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Panjit International Inc.
PJF4NA65A_T0_00001
Harris Corporation
IRFD9123
onsemi
NTD3808N-35G
Toshiba Semiconductor and Storage
SSM5N15FE(TE85L,F)
STMicroelectronics
STY60NM50
STMicroelectronics
STD2NK90ZT4
Infineon Technologies
IPB64N25S320ATMA1
Infineon Technologies
BUZ100S
STMicroelectronics
STP10NK60ZFP
STMicroelectronics