FQP12P10
onsemi
onsemi
MOSFET P-CH 100V 11.5A TO220-3
$1.49
Available to order
Reference Price (USD)
1+
$1.47000
10+
$1.30900
100+
$1.04140
500+
$0.81512
1,000+
$0.65059
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance FQP12P10 from onsemi, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, FQP12P10 delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Obsolete
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 290mOhm @ 5.75A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 75W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
Related Products
STMicroelectronics
STB7NK80Z-1
Fairchild Semiconductor
HUF75344P3_NL
onsemi
FDMC86520DC
Microchip Technology
TN2504N8-G
Renesas Electronics America Inc
UPA2736GR-E1-AX
NXP USA Inc.
BUK7Y35-55B,115
onsemi
FCPF380N60
STMicroelectronics
STD4LN80K5
Panjit International Inc.
PJA3401A_R1_00001
Diodes Incorporated