FQT1N60CTF-WS
onsemi
onsemi
MOSFET N-CH 600V 200MA SOT223-4
$0.76
Available to order
Reference Price (USD)
4,000+
$0.25871
8,000+
$0.24087
12,000+
$0.23195
28,000+
$0.22708
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose FQT1N60CTF-WS by onsemi. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with FQT1N60CTF-WS inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 11.5Ohm @ 100mA, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 2.1W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223-4
- Package / Case: TO-261-4, TO-261AA
Related Products
Diodes Incorporated
DMT10H010LK3-13
Rohm Semiconductor
R6020JNZC8
Vishay Siliconix
SQ2310ES-T1_BE3
onsemi
FDBL0240N100
Infineon Technologies
IPA60R180P7XKSA1
Rectron USA
RM4N650IP
STMicroelectronics
STFW8N120K5
onsemi
MTAJ30N06ELFK
Vishay Siliconix
SI3437DV-T1-E3
STMicroelectronics