FS100R07N3E4_B11
Infineon Technologies
Infineon Technologies
IGBT, 100A, 650V, N-CHANNEL
$96.20
Available to order
Reference Price (USD)
1+
$96.20000
500+
$95.238
1000+
$94.276
1500+
$93.314
2000+
$92.352
2500+
$91.39
Exquisite packaging
Discount
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Infineon Technologies's FS100R07N3E4_B11 IGBT Module offers exceptional reliability for critical applications like aerospace and defense. With features such as avalanche ruggedness and low VCE(sat), it ensures optimal performance. Trust Infineon Technologies for advanced Discrete Semiconductor Products. Ask about customization options!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 100 A
- Power - Max: 335 W
- Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 100A
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 6.2 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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