FS35R12KE3GBPSA1
Infineon Technologies
Infineon Technologies
LOW POWER ECONO AG-ECONO2B-311
$108.48
Available to order
Reference Price (USD)
1+
$108.48000
500+
$107.3952
1000+
$106.3104
1500+
$105.2256
2000+
$104.1408
2500+
$103.056
Exquisite packaging
Discount
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The FS35R12KE3GBPSA1 from Infineon Technologies sets the standard in IGBT Modules with its compact design and high power density. Ideal for servo drives and plasma cutting, it combines fast switching with low conduction losses. Partner with Infineon Technologies for top-tier semiconductor solutions. Get in touch for details!
Specifications
- Product Status: Active
- IGBT Type: -
- Configuration: Full Bridge Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 55 A
- Power - Max: 200 W
- Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 35A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-ECONO2B