FS35R12W1T4BOMA1
Infineon Technologies
Infineon Technologies
IGBT MOD 1200V 65A 225W
$45.82
Available to order
Reference Price (USD)
1+
$38.32000
10+
$35.75100
Exquisite packaging
Discount
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Infineon Technologies's FS35R12W1T4BOMA1 IGBT Module offers exceptional reliability for critical applications like aerospace and defense. With features such as avalanche ruggedness and low VCE(sat), it ensures optimal performance. Trust Infineon Technologies for advanced Discrete Semiconductor Products. Ask about customization options!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 65 A
- Power - Max: 225 W
- Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 35A
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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