FS50R12W2T7B11BOMA1
Infineon Technologies
Infineon Technologies
IGBT MOD 1200V 50A
$64.08
Available to order
Reference Price (USD)
1+
$64.08000
500+
$63.4392
1000+
$62.7984
1500+
$62.1576
2000+
$61.5168
2500+
$60.876
Exquisite packaging
Discount
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The FS50R12W2T7B11BOMA1 from Infineon Technologies sets the standard in IGBT Modules with its compact design and high power density. Ideal for servo drives and plasma cutting, it combines fast switching with low conduction losses. Partner with Infineon Technologies for top-tier semiconductor solutions. Get in touch for details!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Full Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 50 A
- Power - Max: 20 mW
- Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 50A (Typ)
- Current - Collector Cutoff (Max): 7.9 µA
- Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 175°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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