FS660R08A6P2FBBPSA1
Infineon Technologies
Infineon Technologies
HYBRID PACK DRIVE
$624.00
Available to order
Reference Price (USD)
1+
$624.00000
500+
$617.76
1000+
$611.52
1500+
$605.28
2000+
$599.04
2500+
$592.8
Exquisite packaging
Discount
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Infineon Technologies's FS660R08A6P2FBBPSA1 IGBT Module offers exceptional reliability for critical applications like aerospace and defense. With features such as avalanche ruggedness and low VCE(sat), it ensures optimal performance. Trust Infineon Technologies for advanced Discrete Semiconductor Products. Ask about customization options!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 750 V
- Current - Collector (Ic) (Max): 450 A
- Power - Max: 1053 W
- Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 450A
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 80 nF @ 50 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-HYBRIDD-1
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