FS75R07W2E3B11ABOMA1
Infineon Technologies

Infineon Technologies
IGBT MODULES
$71.94
Available to order
Reference Price (USD)
15+
$55.75333
Exquisite packaging
Discount
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Infineon Technologies's FS75R07W2E3B11ABOMA1 IGBT Module offers exceptional reliability for critical applications like aerospace and defense. With features such as avalanche ruggedness and low VCE(sat), it ensures optimal performance. Trust Infineon Technologies for advanced Discrete Semiconductor Products. Ask about customization options!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 95 A
- Power - Max: 275 W
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
- Current - Collector Cutoff (Max): 50 µA
- Input Capacitance (Cies) @ Vce: 4.6 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: ACEPACK™ 2