FS75R12KE3BOSA1
Infineon Technologies
Infineon Technologies
IGBT MOD 1200V 105A 350W
$136.68
Available to order
Reference Price (USD)
1+
$105.93000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Infineon Technologies's FS75R12KE3BOSA1 IGBT Module offers exceptional reliability for critical applications like aerospace and defense. With features such as avalanche ruggedness and low VCE(sat), it ensures optimal performance. Trust Infineon Technologies for advanced Discrete Semiconductor Products. Ask about customization options!
Specifications
- Product Status: Discontinued at Digi-Key
- IGBT Type: NPT
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 105 A
- Power - Max: 350 W
- Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 5.3 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
Related Products
Infineon Technologies
DF200R12KE3HOSA1
Infineon Technologies
F4150R12N3H3FB11BPSA1
Infineon Technologies
FP06R12W1T4B3BOMA1
Infineon Technologies
FP25R12W1T7B11BPSA1
Infineon Technologies
FZ2400R33HE4BPSA1
Infineon Technologies
FS150R12KT4B11BOSA1
Infineon Technologies
F3L400R10W3S7FB11BPSA1
Microchip Technology
APTGT75A120T1G
Infineon Technologies
FF225R12ME4PB11BPSA1
Infineon Technologies