FS75R12W2T7B11BOMA1
Infineon Technologies
Infineon Technologies
IGBT MOD 1200V 75A
$75.48
Available to order
Reference Price (USD)
1+
$75.48000
500+
$74.7252
1000+
$73.9704
1500+
$73.2156
2000+
$72.4608
2500+
$71.706
Exquisite packaging
Discount
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Enhance your power electronics with FS75R12W2T7B11BOMA1 IGBT Modules by Infineon Technologies. Known for their durability and precision, these modules are perfect for applications like electric vehicles, welding equipment, and UPS systems. Features include low saturation voltage and high current capacity. Get the best in semiconductor solutions reach out for pricing and availability.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Full Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 65 A
- Power - Max: 20 mW
- Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 75A (Typ)
- Current - Collector Cutoff (Max): 13 µA
- Input Capacitance (Cies) @ Vce: 15.1 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 175°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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