FZ1800R12HP4B9HOSA2
Infineon Technologies
Infineon Technologies
IGBT MODULE 1200V 2700A
$926.69
Available to order
Reference Price (USD)
1+
$853.85000
Exquisite packaging
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The FZ1800R12HP4B9HOSA2 from Infineon Technologies sets the standard in IGBT Modules with its compact design and high power density. Ideal for servo drives and plasma cutting, it combines fast switching with low conduction losses. Partner with Infineon Technologies for top-tier semiconductor solutions. Get in touch for details!
Specifications
- Product Status: Active
- IGBT Type: Trench
- Configuration: Single Switch
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 2700 A
- Power - Max: 10500 W
- Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 1800A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 110 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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