FZ825R33HE4DBPSA1
Infineon Technologies
Infineon Technologies
HV B SINGLE SWITCH POWER MODULES
$1,687.68
Available to order
Reference Price (USD)
1+
$1687.68000
500+
$1670.8032
1000+
$1653.9264
1500+
$1637.0496
2000+
$1620.1728
2500+
$1603.296
Exquisite packaging
Discount
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Infineon Technologies's FZ825R33HE4DBPSA1 IGBT Module is engineered for high-power applications requiring stability and longevity. Key features include integrated temperature monitoring and low EMI emissions, perfect for medical devices and traction systems. Choose quality contact us for technical specifications and lead times.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Single Switch
- Voltage - Collector Emitter Breakdown (Max): 3300 V
- Current - Collector (Ic) (Max): 825 A
- Power - Max: 2.4 MW
- Vce(on) (Max) @ Vge, Ic: 2.65V @ 15V, 825A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 93.5 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-IHVB130-3
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