FZT653QTA
Diodes Incorporated
Diodes Incorporated
PWR MID PERF TRANSISTOR SOT223 T
$0.34
Available to order
Reference Price (USD)
1+
$0.33903
500+
$0.3356397
1000+
$0.3322494
1500+
$0.3288591
2000+
$0.3254688
2500+
$0.3220785
Exquisite packaging
Discount
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Experience superior performance with FZT653QTA from Diodes Incorporated, a key player in Discrete Semiconductor Products. Our Transistors - Bipolar (BJT) - Single provide high gain and low power consumption, ideal for battery-operated devices. Versatile and dependable, FZT653QTA is suited for a variety of electronic applications. Don't wait reach out now for more information and pricing options.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 2 A
- Voltage - Collector Emitter Breakdown (Max): 100 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
- Power - Max: 1.2 W
- Frequency - Transition: 175MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223-3
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