G06NP06S2
Goford Semiconductor
Goford Semiconductor
N/P60V,RD(MAX)<35M@10V,RD(MAX)<4
$0.91
Available to order
Reference Price (USD)
1+
$0.91000
500+
$0.9009
1000+
$0.8918
1500+
$0.8827
2000+
$0.8736
2500+
$0.8645
Exquisite packaging
Discount
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Enhance your electronic applications with Goford Semiconductor s G06NP06S2, a leading product in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are known for their high-speed performance, low energy consumption, and robust design. Perfect for use in switching regulators, audio systems, and communication devices. Discover the benefits of G06NP06S2 today get in touch with us for a detailed quote and technical support.
Specifications
- Product Status: Active
- FET Type: N and P-Channel
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
- Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 10V, 45mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA, 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 2W (Tc), 2.5W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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