G2R1000MT33J
GeneSiC Semiconductor
GeneSiC Semiconductor
SIC MOSFET N-CH 4A TO263-7
$19.82
Available to order
Reference Price (USD)
1+
$19.82000
500+
$19.6218
1000+
$19.4236
1500+
$19.2254
2000+
$19.0272
2500+
$18.829
Exquisite packaging
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Upgrade your electronic designs with G2R1000MT33J by GeneSiC Semiconductor, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, G2R1000MT33J ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 3300 V
- Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 20V
- Vgs(th) (Max) @ Id: 3.5V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 20 V
- Vgs (Max): +20V, -5V
- Input Capacitance (Ciss) (Max) @ Vds: 238 pF @ 1000 V
- FET Feature: -
- Power Dissipation (Max): 74W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263-7
- Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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