G3R160MT17D
GeneSiC Semiconductor
GeneSiC Semiconductor
SIC MOSFET N-CH 21A TO247-3
$12.97
Available to order
Reference Price (USD)
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$12.97000
500+
$12.8403
1000+
$12.7106
1500+
$12.5809
2000+
$12.4512
2500+
$12.3215
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Discover G3R160MT17D, a versatile Transistors - FETs, MOSFETs - Single solution from GeneSiC Semiconductor, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1700 V
- Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 208mOhm @ 12A, 15V
- Vgs(th) (Max) @ Id: 2.7V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
- Vgs (Max): ±15V
- Input Capacitance (Ciss) (Max) @ Vds: 1272 pF @ 1000 V
- FET Feature: -
- Power Dissipation (Max): 175W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
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