G3R20MT12N
GeneSiC Semiconductor
GeneSiC Semiconductor
SIC MOSFET N-CH 105A SOT227
$59.57
Available to order
Reference Price (USD)
1+
$59.57000
500+
$58.9743
1000+
$58.3786
1500+
$57.7829
2000+
$57.1872
2500+
$56.5915
Exquisite packaging
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Discover high-performance G3R20MT12N from GeneSiC Semiconductor, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, G3R20MT12N delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 15V
- Vgs(th) (Max) @ Id: 2.69V @ 15mA
- Gate Charge (Qg) (Max) @ Vgs: 219 nC @ 15 V
- Vgs (Max): +20V, -10V
- Input Capacitance (Ciss) (Max) @ Vds: 5873 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 365W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227
- Package / Case: SOT-227-4, miniBLOC
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