G3R450MT17J
GeneSiC Semiconductor
GeneSiC Semiconductor
SIC MOSFET N-CH 9A TO263-7
$8.52
Available to order
Reference Price (USD)
1+
$8.52000
500+
$8.4348
1000+
$8.3496
1500+
$8.2644
2000+
$8.1792
2500+
$8.094
Exquisite packaging
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Experience the power of G3R450MT17J, a premium Transistors - FETs, MOSFETs - Single from GeneSiC Semiconductor. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, G3R450MT17J is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1700 V
- Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 585mOhm @ 4A, 15V
- Vgs(th) (Max) @ Id: 2.7V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 15 V
- Vgs (Max): ±15V
- Input Capacitance (Ciss) (Max) @ Vds: 454 pF @ 1000 V
- FET Feature: -
- Power Dissipation (Max): 91W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263-7
- Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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