G3S06504D
Global Power Technology-GPT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 4A 2-PIN
$3.29
Available to order
Reference Price (USD)
1+
$3.29000
500+
$3.2571
1000+
$3.2242
1500+
$3.1913
2000+
$3.1584
2500+
$3.1255
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your circuitry with Global Power Technology-GPT's G3S06504D Single Rectifier Diodes, tailored for seamless integration and high reliability. These diodes excel in applications such as voltage clamping, freewheeling, and reverse polarity protection. With features like high surge withstand capacity and low thermal resistance, they are a must-have for any electronics engineer. Global Power Technology-GPT guarantees top-tier quality and performance. Ready to take the next step? Reach out for a detailed consultation!
Specifications
- Product Status: Active
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 11.5A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 50 µA @ 650 V
- Capacitance @ Vr, F: 181pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263
- Operating Temperature - Junction: -55°C ~ 175°C
Related Products
Diodes Incorporated
S2KA-13
Vishay General Semiconductor - Diodes Division
VS-20BQ030-M3/5BT
Central Semiconductor Corp
CMSH1-60 TR13 PBFREE
Microchip Technology
CDLL5712
Vishay General Semiconductor - Diodes Division
GI1-1600GP-E3/54
SMC Diode Solutions
SD072SC150A.T
Taiwan Semiconductor Corporation
SR515
onsemi
NRVS3GB
Comchip Technology
CDBA1100-HF
Microchip Technology