G3S06508B
Global Power Technology-GPT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 8A 3-PIN
$5.51
Available to order
Reference Price (USD)
1+
$5.51000
500+
$5.4549
1000+
$5.3998
1500+
$5.3447
2000+
$5.2896
2500+
$5.2345
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience unparalleled performance with the G3S06508B from Global Power Technology-GPT, a key player in the Diodes - Rectifiers - Arrays segment of Discrete Semiconductor Products. These diodes are engineered for precision and durability, offering features such as fast recovery time and high current density. The G3S06508B is perfect for applications requiring reliable rectification and array configurations. Global Power Technology-GPT ensures every product meets stringent quality controls. Contact us today to request a sample or to discuss bulk purchase options!
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io) (per Diode): 14A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 50 µA @ 650 V
- Operating Temperature - Junction: -55°C ~ 175°C
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AB
Related Products
Panjit International Inc.
BAV70_R1_00001
GeneSiC Semiconductor
MBR600150CTR
Diodes Incorporated
SBR20A300CTB-13
Yangzhou Yangjie Electronic Technology Co.,Ltd
MUR1640FCT-B1-0000HF
Infineon Technologies
BAW79DH6327XTSA1
Vishay General Semiconductor - Diodes Division
VS-VSKC270-04PBF
Diodes Incorporated
BAT54DW-7-F
Microchip Technology
MSCDC150KK120D1PAG
Vishay General Semiconductor - Diodes Division
V30D45C-M3/I
GeneSiC Semiconductor