Shopping cart

Subtotal: $0.00

G3S06550P

Global Power Technology-GPT
G3S06550P Preview
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 50A 2-PI
$40.04
Available to order
Reference Price (USD)
1+
$40.04000
500+
$39.6396
1000+
$39.2392
1500+
$38.8388
2000+
$38.4384
2500+
$38.038
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 105A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 50 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 100 µA @ 650 V
  • Capacitance @ Vr, F: 4400pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247AC
  • Operating Temperature - Junction: -55°C ~ 175°C

Related Products

Micro Commercial Co

ER3M-TP

Semtech Corporation

JANTX1N5550US.TR

Vishay General Semiconductor - Diodes Division

UG1D-E3/54

Nexperia USA Inc.

BAT54W,115

Panjit International Inc.

FR1BAFC_R1_00001

Vishay General Semiconductor - Diodes Division

VS-15ETH06-M3

SURGE

FS14

Panjit International Inc.

SV5100_R2_00001

Vishay General Semiconductor - Diodes Division

VS-T40HFL100S05

Vishay General Semiconductor - Diodes Division

MPG06B-E3/100

Top