G3S06560B
Global Power Technology-GPT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 4A 3-PIN
$40.09
Available to order
Reference Price (USD)
1+
$40.09000
500+
$39.6891
1000+
$39.2882
1500+
$38.8873
2000+
$38.4864
2500+
$38.0855
Exquisite packaging
Discount
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Enhance your circuit designs with the G3S06560B by Global Power Technology-GPT, a standout in the Diodes - Rectifiers - Arrays field under Discrete Semiconductor Products. These diodes are built to provide reliable rectification and array functionality, ensuring optimal performance in various settings. The G3S06560B boasts low leakage current and high reverse voltage, making it a versatile component for multiple applications. Global Power Technology-GPT's commitment to excellence guarantees products you can trust. Contact us now for pricing and availability!
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io) (per Diode): 95A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 50 µA @ 650 V
- Operating Temperature - Junction: -55°C ~ 175°C
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AB
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