G3S12010A
Global Power Technology-GPT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 10A 2-P
$18.36
Available to order
Reference Price (USD)
1+
$18.36000
500+
$18.1764
1000+
$17.9928
1500+
$17.8092
2000+
$17.6256
2500+
$17.442
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic designs with G3S12010A Single Rectifier Diodes by Global Power Technology-GPT, offering unparalleled efficiency and durability. Ideal for power supplies, inverters, and DC-DC converters, these diodes feature ultra-low leakage and high junction temperature tolerance. Their robust design ensures stable performance in extreme conditions. Whether for prototyping or mass production, Global Power Technology-GPT has you covered. Request a quote or technical support today!
Specifications
- Product Status: Active
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 34.8A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
- Capacitance @ Vr, F: 770pF @ 0V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: -55°C ~ 175°C
Related Products
onsemi
NRVB8H100MFST1G
Vishay General Semiconductor - Diodes Division
VS-SD1100C08C
Vishay General Semiconductor - Diodes Division
ES2F-E3/5BT
SMC Diode Solutions
FR201G
Vishay General Semiconductor - Diodes Division
UGF8DT-E3/45
Panjit International Inc.
ERT1DAFC_R1_00001
Diotec Semiconductor
M2-CT
Vishay General Semiconductor - Diodes Division
VS-MBRS140-M3/5BT
Panjit International Inc.
MER3DMA_R2_00601
Micro Commercial Co