G3S12010BM
Global Power Technology-GPT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 10A 3-P
$15.80
Available to order
Reference Price (USD)
1+
$15.80000
500+
$15.642
1000+
$15.484
1500+
$15.326
2000+
$15.168
2500+
$15.01
Exquisite packaging
Discount
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Choose the G3S12010BM from Global Power Technology-GPT for superior Diodes - Rectifiers - Arrays solutions within the Discrete Semiconductor Products range. These diodes are optimized for precision and durability, making them suitable for high-stakes applications. The G3S12010BM features excellent thermal performance and high surge current tolerance, ensuring reliability in harsh environments. Global Power Technology-GPT is a name you can trust for cutting-edge semiconductor technology. Don t hesitate contact us now for more information and to request a quote!
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io) (per Diode): 19.8A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
- Operating Temperature - Junction: -55°C ~ 175°C
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AB
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