G3S12010C
Global Power Technology-GPT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 10A 2-P
$11.55
Available to order
Reference Price (USD)
1+
$11.55000
500+
$11.4345
1000+
$11.319
1500+
$11.2035
2000+
$11.088
2500+
$10.9725
Exquisite packaging
Discount
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Streamline your power solutions with G3S12010C Single Rectifier Diodes from Global Power Technology-GPT, a trusted name in discrete semiconductors. These diodes are perfect for high-efficiency rectification in consumer and industrial electronics. Features such as low reverse recovery time and high surge capability make them a preferred choice. Applications include LED lighting, HVAC systems, and more. Global Power Technology-GPT ensures top-notch performance and reliability. Inquire today to learn how we can meet your needs!
Specifications
- Product Status: Active
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 33.2A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
- Capacitance @ Vr, F: 765pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252
- Operating Temperature - Junction: -55°C ~ 175°C
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